60v 6a Diode

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TSM900N06 60V N-Channel Power MOSFET 1/8 Version: C1612 TO-251S (IPAK SL) TO-252 (DPAK) Key Parameter Performance Parameter Value Unit V DS 60 V R DS(on) (max) V GS = 10V 90 mΩ V GS = 4. Check our stock now! For your security, you are about to be logged out 60 seconds. 10 Pcs Schottky Barrier Rectifier Diode. Power Transistors are transistors which can handle a lot more power in compared to BJTs. 4 V EN Input Leakage Current IEN_LEAK VEN = 0V, 5V -1 +1 μA Electrical Characteristics (continued) www. ALFATRONIX provides lifetime guarantee. 25W 220Mhz 2SC829 NPN 30mA 30V 230Mhz 2SC945 NPN 100mA 60V 0. Zetex - ZXMN6A09K 60V N-channel enhancement mode MOSFET datasheet Keywords DC-DC conversion ,Power management functions ,Relay and solenoid driving ,Motor control,Low on-resistance ,Fast switching speed ,Low threshold ,Low gate drive ,DPAK (T0-252) package,. Schottky Diodes & Rectifiers 6A 60V Enlarge Mfr. 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Diodes Incorporated 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS RDS(on) ID TA = +25 C 60V 68mΩ @ VGS= 10V 5. , Experts in Manufacturing and Exporting Diode, Transistor and 2054 more Products. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. SB560 Schottky Diode, 60V 5A. Browse our latest rectifier-diodes-schottky-diodes offers. Copper, in a still air environment with T A=25 °C. Do not exceed 23 + 23V supply. 3A Automotive 4-Pin(3+Tab) SOT-223 T/R, View the manufacturer, and stock, and datasheet pdf for the DMN6069SE-13 at Jotrin Electronics. high performance current mode power switch. 001 Roff=1Meg Vfwd=0. DMN6140L-7 – N-Channel 60V 1. Peak diode recovery voltage slope 10 V/ns EAS (3) 3. 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